Forming tapered lower electrode phase-change memories

ABSTRACT

A phase-change memory may have a tapered lower electrode coated with an insulator. The coated, tapered electrode acts as a mask for a self-aligned trench etch to electrically separate adjacent wordlines. In some embodiments, the tapered lower electrode may be formed over a plurality of doped regions, and isotropic etching may be used to taper the electrode as well as part of the underlying doped regions.

BACKGROUND

This invention relates generally to memories that use phase-changematerials.

Phase-change materials may exhibit at least two different states. Thestates may be called the amorphous and crystalline states. Transitionsbetween these states may be selectively initiated. The states may bedistinguished because the amorphous state generally exhibits higherresistivity than the crystalline state. The amorphous state involves amore disordered atomic structure and the crystalline state involves amore ordered atomic structure. Generally, any phase-change material maybe utilized; however, in some embodiments, thin-film chalcogenide alloymaterials may be particularly suitable.

The phase-change may be induced reversibly. Therefore, the memory maychange from the amorphous to the crystalline state and may revert backto the amorphous state thereafter or vice versa. In effect, each memorycell may be thought of as a programmable resistor, which reversiblychanges between higher and lower resistance states in response totemperature changes. The temperature changes may be induced by resistiveheating.

In some situations, the cell may have a large number of states. That is,because each state may be distinguished by its resistance, a number ofresistance-determined states may be possible, allowing the storage ofmultiple bits of data in a single cell.

A variety of phase-change alloys are known. Generally, chalcogenidealloys contain one or more elements from column VI of the periodictable. One particularly suitable group of alloys are GeSbTe alloys.

In any memory, it is desirable to pack the individual memory cells asclosely as possible. With conventional phase-change memory materials,there is no real way to self-align the trenches that separate adjacentrows of memory cells from one another. Therefore, critical alignmentprocessing may be necessary to accurately space one wordline from thenext. Moreover, extra real estate may be needed between adjacentwordlines to make up for any misalignment between the trenches and theadjacent memory cells.

Thus, there is a need for better ways to form trenches for phase-changememories.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is an enlarged cross-sectional view in accordance with oneembodiment of the present invention;

FIG. 2 is an enlarged cross-sectional view of the structure described inFIG. 1 at an early stage fabrication, in accordance with one embodimentof the present invention;

FIG. 3 is a cross-sectional view of the embodiment depicted in FIG. 2after subsequent processing;

FIG. 4 is a cross-sectional view of the embodiment depicted in FIG. 3after further processing;

FIG. 5 shows subsequent processing on the structure shown in FIG. 4 inaccordance with one embodiment of the present invention;

FIG. 6 shows subsequent processing on the structure shown in FIG. 5, inaccordance with one embodiment of the present invention;

FIG. 7 shows subsequent processing on the structure shown in FIG. 6 inaccordance with one embodiment of the present invention;

FIG. 8 is an enlarged, cross-sectional view of the structure shown inFIG. 7 after additional processing in accordance with one embodiment ofthe present invention; and

FIG. 9 is a schematic depiction of a processor-based system inaccordance with one embodiment of the present invention.

DETAILED DESCRIPTION

Referring to FIG. 1, in one embodiment of the invention, a memory cell10 may include a suitable phase change material 32 disposed between atapered lower electrode 22 and an upper electrode 31. One suitable typeof phase change material may be an alloy that includes at least onechalcogen element, and a transition element among others. Examples ofsuch alloys are alloys of Germanium, Antimony and Tellerium.

The lower electrode 22 may be formed over a substrate 12. The substrate12 may include a lower substrate portion 12 a of a first conductivitytype that, in one embodiment of the present invention, may be a P−material. A conical substrate portion 12 b may extend upwardly from thelower portion 12 a to the lower electrode 22. The conical substrateportion 12 b may include a plurality of layers 14-20.

In one embodiment, the layers 14, 16, and 18 may be of a secondconductivity type opposite to the first conductivity type. For example,the layer 14 may be an N-layer, the layer 16 may be an N+ layer, and thelayer 18 may be an N− layer, in accordance with one embodiment of thepresent invention. Together the layers 14, 16, and 18 may form a buriedwordline, in one embodiment of the present invention.

Over the layers 14, 16, and 18, may be a layer 20 of the firstconductivity type, which, in one embodiment of the present invention,may be a P+ layer. The juxtaposition of the layers 14, 16, and 18 of asecond conductivity type below the layer 20 of a first conductivity typemay form a diode.

The tapered shape of the lower electrode 22 reduces the contact areabetween the electrode 22 and the phase-change material 32. Thisincreases the resistance at the point of contact, increasing the abilityof the electrode 22 to heat the layer 32. In some embodiments, the lowerelectrode 22 may be made of cobalt silicide and may be covered byinterfacial layers.

The conical substrate portion 12 b may be covered with a suitabledielectric 30 such as silicon dioxide. Further, each wordline may beelectrically isolated from two adjacent wordlines by trenches 33 thatmay be filled with insulator 34 such as silicon dioxide.

The sidewalls of the conical substrate portion 12 b may be covered withdielectric layers 26 and 28. In some embodiments the layer 26 may besilicon dioxide and the layer 28 may be silicon nitride. The layers 26and 28 may aid in the formation of the trenches 33.

The upper electrode 31 may be made of any suitable electrical conductor.In some embodiments the electrode 31 may be covered by barrier oradhesion layers.

Turning next to FIG. 2, the formation of the memory cell 10 may beginwith the formation of the layers 14-20. The substrate 12 may besubjected to a sequence of ion implantation steps. The energy, dose, andangle of ion beams of a series of implants may be selected to achievethe doping profile of the layers 14, 16, 18 and 20 shown in FIG. 2.

While the exact nature of the ion implantation steps may be subject toconsiderable variation, an initial implantation may be utilized to forma P-type well. This may be followed by P type and N type implants toform the layers 14-20. These implants in turn may be followed by one ormore additional implants, in some embodiments, to create the profilesindicated in FIG. 2. In some embodiments, P type regions may be formedby a boron implant and N type regions may be formed by a phosphorusimplant.

The same implantation process may simultaneously be used to definestructures in a large number of surrounding memory cells (not shown)also formed in the substrate 10. This implantation process may be donein a blanket fashion without masking between cells, in some embodiments.

The lower electrode 22 may be deposited over the region 20 as depictedin FIG. 3. A mask 24, which may be made of photoresist, may be patternedover each electrode 22 on the substrate 12 to form circular patches, insome embodiments. The structure, shown in FIG. 3, may be isotropicallyetched. Mask and etch parameters are selected so that the vertical andlateral etch rates are sufficient to cut through layers 16, 18 and 20and achieve a taper on the electrode 22. The deposition of the lowerelectrode 22 may also simultaneously form the lower electrodes 22 of anumber of surrounding memory cells (not shown) without the need to maskoff the electrodes 22 for each cell.

The substrate portion 12 b is conically shaped as a result of theetching as shown in FIG. 4. The etched dimension of the lower electrode22 may be smaller than that of the mask 24 due to undercutting. Theisotropic etching also separates the electrodes 22 of each memory cell10 from the electrodes 22 of surrounding cells. The mask 24 may besubsequently removed, for example by ashing, to expose the lowerelectrode 22.

In some embodiments, the size of the closed region of mask 24 may be theminimum feature size attainable. Other methods to reduce the area of theupper surface of the lower electrode 22 may include reactive means suchas oxidation.

The conical substrate portion 12 b may be covered with dielectric layers26 and 28 as shown in FIG. 5. A process such as low-pressure chemicalvapor deposition (LPCVD) may be used to deposit each material. Again,the portions 12 b of a large number of surrounding memory cells (notshown) may be covered in the same blanket deposition without maskingbetween the cells.

Subsequently the dielectric layer 28 may be etched selectively withrespect to the dielectric layer 26 by any anisotropic means such asreactive ion etching. The residual dielectric region 28 over the conicalsubstrate portion 12 b is removed from horizontal surfaces as a resultof anisotropic etching as shown in FIG. 6.

Further, the conical substrate portion 12 b may be covered with aninsulator 30, as shown in FIG. 7. This insulator 30 is chemicallydistinct from dielectric layer 28 and, in some embodiments, may behigh-density plasma (HDP) oxide. Planarization of the insulator 30, forexample, by chemical mechanical planarization (CMP) may expose (andperhaps flatten) the tip 27 of the lower electrode 22.

A pair of spaced trenches 33, electrically isolating a wordline of cells10 from adjacent wordlines, may be etched through the insulator 30 oneither side of the memory cell 10 using suitable patterning and etchingmethods. In particular, the etch parameters are selected to etch theinsulator 30 selectively with respect to the dielectric region 28.

In regions of slight mask misalignment, the dielectric layer 28 reducesthe etching of the conical substrate portion 12 b confining the etch tothe region between adjacent wordlines. Thus, the dielectric layers 26and 28 enable the etching of the trenches 33 in close proximity to theconical substrate portion 12 b of surrounding memory cells 10 withoutthe need for a critical mask alignment.

The etched trenches 33 extend into the lower substrate portion 12 a toelectrically isolate the wordline of cells 10. The cells in eachwordline may be simultaneously severed from adjacent wordlines bysevering the connection that remains via the layer 14. Thus, a pluralityof wordlines may be electrically isolated by the same self-alignedtrench isolation step.

Referring to FIG. 8, the phase-change material 32 may be deposited overthe lower electrode 22 and the insulator 30. A suitable conductiveregion may be deposited over the deposited lower electrode 22 to formthe upper electrode 31 by patterning and etching the phase-changematerial 32/lower electrode 22 stack.

The memory cell 10 shown in FIG. 1 may be replicated to form a memoryarray containing many cells. Such memory arrays can be used as thememory of a wide variety of processor-based systems, such as system 40in FIG. 9, or in processor-based appliances.

FIG. 9 depicts one possible embodiment of a computer system 40 thatmight use a plurality of such memory cells, or memory array, indifferent configurations. The phase change memory 48 formed according tothe principles described herein, may act as a system memory. The memory48 may be coupled to an interface 44, for instance, which in turn iscoupled between a processor 42, a display 46 and a bus 50. The bus 50 insuch an embodiment is coupled to an interface 52 that in turn is coupledto another bus 54.

The bus 54 may be coupled to a basic input/output system (BIOS) memory62 and to a serial input/output (SIO) device 56. The device 56 may becoupled to a mouse 58 and a keyboard 60, for example. Of course, thearchitecture shown in FIG. 9 is only an example of a potentialarchitecture that may include the memory 48 using the phase-changematerial.

While the present invention has been described with respect to a limitednumber of embodiments, those skilled in the art will appreciate numerousmodifications and variations therefrom. It is intended that the appendedclaims cover all such modifications and variations as fall within thetrue spirit and scope of this present invention.

1-22. (canceled)
 23. A method comprising: forming a conical structureover a substrate; and using said conical structure as a mask to form atrench.
 24. The method of claim 23 including forming a conical structureincluding a tapered electrode at the top of said conical structure. 25.The method of claim 23 including forming a plurality of layers in saidconical structure of different conductivity types.
 26. The method ofclaim 24 including forming layers in said conical structure of the sameconductivity type but different doping levels.
 27. The method of claim23 including forming a phase-change material over said conicalstructure.
 28. The method of claim 27 including forming an electrodeover said phase-change material.
 29. The method of claim 23 includingcovering said conical structure with an insulator.
 30. The method ofclaim 29 including anisotropically etching said covered conicalstructure.
 31. A phase-change memory comprising: a substrate; a conicalstructure formed over said substrate, said conical structure includingan electrode; a trench self-aligned to said conical structure; and aphase-change material in contact with said electrode.
 32. The memory ofclaim 31 wherein said conical structure includes a plurality of layersof different conductivity types.
 33. The memory of claim 32 wherein saidconical structure includes a conductive line.
 34. The memory of claim 31including an insulator covering said conical structure.
 35. The memoryof claim 31 including two trenches self-aligned to said conicalstructure.